High-Speed Ternary Half adder based on GNRFET

Nayeri, Mahdieh; Keshavarzian, Peiman; Nayeri, Maryam

doi:10.22034/jna.2019.668030

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	High-Speed Ternary Half adder based on GNRFET
Article 6, Volume 6, Issue 3, Summer 2019, Page 193-198 PDF (647.27 K)
Document Type: Original Research Paper
DOI: 10.22034/jna.2019.668030
Authors
Mahdieh Nayeri¹; Peiman Keshavarzian ¹; Maryam Nayeri²
¹Department of Computer Engineering, Kerman Branch, Islamic Azad University, Kerman, Iran
²Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran
Abstract
Superior electronic properties of graphene make it a substitute candidate for beyond-CMOS nanoelectronics in electronic devices such as the field-effect transistors (FETs), tunnel barriers, and quantum dots. The armchair-edge graphene nanoribbons (AGNRs), which have semiconductor behavior, are used to design the digital circuits. This paper presents a new design of ternary half adder based on graphene nanoribbon FETs (GNRFETs). Due to reducing chip the area and integrated circuit (IC) interconnects, ternary value logic is a good alternative to binary logic. Extensive simulations have been performed in Hspice with 15-nm GNRFET technology to investigate the power consumption and delay. Results show that the proposed design is very high-speed in comparison with carbon nanotube FETs (CNTFETs). The proposed ternary half adder based on GNRFET at 0.9V exhibiting a low power-delayproduct (PDP) of ~10-20 J, which is a high improvement in comparison with the ternary circuits based on CNTFET, lately proposed in the literature. This proposed ternary half adder can be advantageous in complex arithmetic circuits.
Keywords
Armchair- Edge Graphene Nanoribbon; High-Speed; Power Consumption; Ternary Half Adder


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