Performance Investigation of Pentacene Based Organic Double Gate Field Effect Transistor and its Application as an Ultrasensitive Biosensor

Document Type: Original Research Paper

Authors

1 Graduate Student, Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran

2 Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran

3 Assistant Professor, Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran.

10.22034/jna.2020.1884903.1177

Abstract

In this paper, the electrical performance of double gate organic field effect transistor (DG-OFET) are thoroughly investigated and feasibility of the device as an efficient biosensor is comprehensively assessed. The introduced device provides better gate control over the channel, yielding better charge injection properties from source to channel and providing higher on-state current in comparison with single gate devices. The susceptibility of fundamental electrical parameters with respect to the variation of design parameters is thoroughly calculated. In particular, standard deviation and average value of main electrical parameters signify that metal gate workfunction, channel thickness and gate oxide thickness are fundamental design measures that may modify the device efficiency. The insensitivity of off-state current to the change of channel length and drain bias confirms feasibility of the device in nanoscale regime. Next, a nano cavity is embedded in the gate insulator region for accumulation of biomolecules. The immobilization of molecules with different dielectric constants in the gate insulator hollow alters the gate capacitance and results in the drain current deviation with respect to the air- filled cavity condition. It is shown that by the occupancy of whole volume of the nanogap, a maximum range of on-state current variation can be achieved.

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