Performance Optimization and Sensitivity Analysis of Junctionless FinFET with Asymmetric Doping Profile

Document Type : Original Research Paper


1 Yadegar-e-Imam Khomeini (RAH) Shahre Rey Branch, Islamic Azad University, Tehran, Iran. E-mail:;

2 Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran



In this paper, a novel junctionless fin field effect transistor (FinFET) with
asymmetric doping profile along with the device from source to drain (ADJFinFET)
is introduced and the electrical characteristics of the device are comprehensively
assessed. Unlike the conventional junctionless FinFET, ADJFinFET has lower
channel doping density with respect to the adjacent source and drain regions,
which provides superior electrical performance in nanoscale regime. The impact
of device geometry and physical design parameters on the device performance
are thoroughly investigated via calculating standard deviation over mean value
of main electrical measures. The sensitivity analysis reveals that metal gate
workfunction, doping density and fin width are critical design parameters that
may fundamentally modify the device performance. Furthermore, 2D variation
matrix of gate workfunction and channel doping density is calculated for
optimizing the device performance in terms of off-state and on-state current. The
results demonstrate that the proposed device establishes a promising candidate
to realize the requirements of low-power high-performance integrated circuits.